q?v~zy??q?v?_ra]q{??qcabeq HCH20NT60V bv dss = 600 v r ds(on) typ = 0.17
i d =20a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 54 nc (typ.) ? extended safe operating area ? lower r ds(on) : 0.17
7 \ s # 9 gs =10v ? 100% avalanche tested ? rohs compliant features absolute maximum ratings t c =25 e unless otherwise specified HCH20NT60V 600v n-channel super junction mosfet symbol parameter value units v dss drain-source voltage 600 v i d drain current ? continuous (t c = 25 e ) 20 a drain current ? continuous (t c = 100 e ) 12.5 a i dm drain current ? pulsed (note 1) 60 a v gs gate-source voltage 20 v e as single pulsed avalanche energy (note 2) 500 mj i ar avalanche current (note 1) 20 a e ar repetitive avalanche energy (note 1) 1mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 e ) - derate above 25 e 208 w 0.67 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 0.6 e /w r ja junction-to-ambient -- 62 jan 2014 1.gate 2. drain 3. source 3 2 1 to-3p
q?v~zy??q?v?_ra]q{??qcabeq HCH20NT60V electrical characteristics t j =25 q c unless otherwise specified i s continuous source-drain diode forward current -- -- 20 a i sm pulsed source-drain diode forward current -- -- 60 v sd source-drain diode forward voltage i s = 20 a, v gs = 0 v -- -- 1.2 v trr reverse recovery time i s = 20 a, v gs = 0 v di f /dt = 100 a/ v (note 4) -- 440 -- qrr reverse recovery charge -- 5 -- & symbol parameter test conditions min typ max units v gs gate threshold voltage v ds = v gs , i d = 250 3 2.5 -- 3.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 10 a -- 0.17 0.19 ? g fs forward transconductance v ds = 30 v, i d = 10 a q -- 18.8 -- ?q on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 600 -- -- v i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 1 3 v ds = 480 v, t c = 125 e -- -- 10 3 i gss gate-body leakage current v gs = 20 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1.0 mhz -- 2140 2780 ? c oss output capacitance -- 300 390 ? c rss reverse transfer capacitance -- 18 23.5 ? dynamic characteristics t d(on) turn-on time v ds = 300 v, i d = 20 a, r g = 25 ? (note 4,5) -- 40 90 t r turn-on rise time -- 110 230 t d(off) turn-off delay time -- 310 630 t f turn-off fall time -- 110 230 q g total gate charge v ds = 480v, i d = 20 a, v gs = 10 v (note 4,5) -- 54 70 nc q gs gate-source charge -- 10 -- nc q gd gate-drain charge -- 20 -- nc switching characteristics source-drain diode maximum ratings and characteristics package marking and ordering information device marking week marking package packing quantity rohs status HCH20NT60V ywwx to-3p tube 30 pb free HCH20NT60V ywwxg to-3p tube 30 halogen free notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=2.3mh, i as =20a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ ,di/dt ? $ v , v dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & |